Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving Poisson equation including Site-Binding and Gouy-Chapman-Stern approach, while carrier transport described drift-diffusion theory. proposed provided in an analytical form then implemented Verilog-A, making it compatible with standard technology computer-aided design tools employed circuit simulation. benchmarked against two experimental transition-metal-dichalcogenide (MoS2 ReS2) ion sensors, showing excellent agreement when predicting drain current, threshold voltage shift, current/voltage sensitivity measurements different pH concentrations.